BGS12A spdt rf switch preliminary data sheet, v1.1, sep. 2007 small signal discretes
edition 2007-09-14 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BGS12A spdt rf switch preliminary data sheet 3 v1.1, 2007-09-14 BGS12A revision history: 2007-09-14, v1.1 previous version: 2006-10-19, v1.0 page subjects (major changes since last revision) all document layout change
preliminary data sheet 4 v1.1, 2007-09-14 BGS12A spdt rf switch BGS12A BGS12A description the BGS12A general purpose rf mos switch is designed to cover a broad range of applications from 0.1 to 3 ghz. the symmetric design of its single pole double throw configuration, as shown in figure 1 offers high design flexibility. this single supply chip integrates on-chip cmos logic driven by a simple, single-pin cmos or ttl compatible control input signal. the 0.1 db compression point exceeds the switch?s maximum input power level of 21 dbm, resulting in linear performance at all signal levels. the rf switch has a very low insertion loss of 0.3 db in the 1 ghz and 0.6 db in the 2 ghz range. unlike gaas technology, external dc blocking capacitors at the rf ports are only required if dc voltage is applied externally. the BGS12A rf switch is manufactured in infineon?s patented mos technology, offering the performance of gaas with the economy and integration of conventional cmos including the inherent higher esd robustness. figure 1 functional diagram features ? low insertion loss ? high port-to-port-isolation ? low harmonic generation ? on-chip control logic ? lead free solder bumps ? high esd robustness ? no external components required ? general purpose switch for applications up to 3 ghz ? pb-free (rohs compliant) package type package marking chip BGS12A fwlp-6-1 12 n0735 % * 6 $ b ) x q f w l r q d o b ' l d j u d p p y v g * 1 ' 5 ) 9 g g & w u o ' h f r g h u ( 6 ' 5 ) 5 ) l q * 1 ' 5 ) 9 g g & w u o ' h f r g h u ( 6 ' 5 ) 5 ) l q
BGS12A spdt rf switch BGS12A preliminary data sheet 5 v1.1, 2007-09-14 table 1 maximum ratings parameter symbol values unit note / test condition min. typ. max. storage temperature range t stg -65 150 c dc voltage at all pins to gnd v dc 5v rf power max. at all rf ports p in 24 dbm esd capability human body-model iec61340-3-1 machine-model iec61340-3-2 v esd 1000 100 v table 2 operation ranges parameter symbol values unit note / test condition min. typ. max. ambient temperature t a -30 85 c rf frequency f 0.1 3 ghz control voltage low v ctrl -0.3 0.3 v control voltage high v ctrlh 1.4 2.8 v supply voltage 1) 1) supply voltage must be connected before control voltage v dd tbd 2.8 v current consumption vdd pin (over temperature) i vdd 80 350 a current consumption vctrl pin i ctrl 30 a power range (vswr : 1)) (vswr 3: 1) (vswr 1: 1) p in 15 18 21 dbm
preliminary data sheet 6 v1.1, 2007-09-14 BGS12A spdt rf switch BGS12A figure 2 pinning table 3 pin description pin name description 1rf1rf port 1 out 2 gnd ground 3rf2rf port 2 out 4 ctrl control pin 5 rfin rf port in 6 vdd supply voltage table 4 truth table ctrl 1 rf 1 rf 2 01 0 10 1 % * 6 $ b 3 l q q l q j y v g % x p s 6 l g h 9 l h z
BGS12A spdt rf switch BGS12A preliminary data sheet 7 v1.1, 2007-09-14 electrical specifications ? termination port impedance: z 0 = 50 ? ? temperature range: t = 25 c ? supply voltage: v dd = 2.8 v ? p in = 15 dbm ? across operating range of control voltages: v ctrh = 1.4...2.8 v table 5 electrical characteristics parameter symbol values unit note / test condition min. typ. max. insertion loss 1) 1) with external matching at antenna port il 0.3 db f =1ghztx 0.6 db f =2ghztx 0.4 db f =1ghz tx, t a =85c 0.8 db f =2ghz tx, t a =85c return loss rl 15 db f =1ghz 10 db f =2ghz isolation rfin - rf1 iso rfin-rf1 30 34 db f =1ghz 22 27 db f =2ghz isolation rfin - rf2 iso rfin-rf2 30 34 db f =1ghz 22 27 db f =2ghz isolation rf1 - rf2 iso rf1-rf2 30 43 db f =1ghz 28 34 db f =2ghz isolation rf ports - vdd, vctrl iso rf-dc 30 35 db f =1ghz 20 35 db f =2ghz harmonic generation up to 12.75 ghz p harm -75 -50 dbm f =1ghz -80 -50 dbm f =2ghz on switching time (10-90%) rf t on 4 s f =1ghz off switching time (10-90%) rf t off 4 s f =1ghz current consumption at vdd pin i dd 120 a input 0.1 db compression p 0.1db 21 dbm f =1ghz
preliminary data sheet 8 v1.1, 2007-09-14 BGS12A spdt rf switch BGS12A package outlines figure 3 package outline figure 4 solder bumps dimensions in mm you can find all of our packages, sorts of packing and others in our infineon internet page ?products?: http://www.infineon.com/products . % * 6 $ b 3 d f n d j h b 2 x w o l q h y v g 5 ) % x p s 6 l g h 9 l h z 5 ) * q g 9 g g & w u o 5 ) l q ? ? p ? ? p ? p ? p ? p ? p 110 13m bump height: 90 14m chip height: 250m ubm 80 4 m solderbump material: snag (96.5/2.5) bgs 12a _solder _bumps.vsd
|
